Jerry G. Fossum
From Wikipedia the free encyclopedia
Jerry G. Fossum | |
|---|---|
| Born | July 18, 1943 Phoenix, Arizona, U.S. |
| Academic background | |
| Education | University of Arizona (BS, MS, PhD) |
| Academic work | |
| Discipline | Electrical engineering |
| Sub-discipline | Semiconductor device theory Semiconductor device modeling Integrated circuit design |
| Institutions | Sandia National Laboratories University of Florida |
Jerry G. Fossum (born July 18, 1943) is an American electrical engineer who is a Distinguished Professor Emeritus at the University of Florida College of Engineering.
Early life and education[edit]
Fossum is a native of Phoenix, Arizona. He earned a Bachelor of Science, Master of Science, and PhD in electrical engineering from the University of Arizona.
Career[edit]
Fossum worked for Sandia National Laboratories before joining the University of Florida faculty in 1978. In 1983, he was elected a fellow of the IEEE.[1] Fossum received the J. J. Ebers Award in 2004.[2] His scholarship focuses on the semiconductor device theory, modeling, and design.[3]
References[edit]
- ^ Huang, Ya-Chi; Chiang, Meng-Hsueh; Wang, Shui-Jinn; Fossum, Jerry G. (March 2017). "GAAFET Versus Pragmatic FinFET at the 5nm Si-Based CMOS Technology Node". IEEE Journal of the Electron Devices Society. 5 (3): 164–169. doi:10.1109/JEDS.2017.2689738.
- ^ "EDS Honors SOI Pioneer". SOI Industry Consortium. 18 April 2005. Retrieved 22 February 2022.
- ^ "Jerry G. Fossum Speaker Profile" (PDF). cmu.edu.
| International | |
|---|---|
| National | |
| Academics | |
| Other | |
